Sababtoo ah naadirnimada moissanite-ka dabiiciga ah, inta badan carbide-ka silicon waa macmal. Waxaa loo isticmaalaa xoqid, dhawaanahanna waxaa loo isticmaalaa simulant semiconductor iyo dheeman oo tayo leh. Habka ugu fudud ee wax soo saarka waa in lagu daro ciidda silica iyo kaarboonka foornada iska caabbinta korontada ee Acheson graphite heerkul sare, inta u dhaxaysa 1,600 °C (2,910 °F) iyo 2,500 °C (4,530 °F). Walxaha SiO2 ee fiican ee ku jira walxaha dhirta (tusaale ahaan qolofta bariiska) waxaa loo rogi karaa SiC iyadoo lagu kululeynayo kaarboonka xad-dhaafka ah ee ka imanaya walxaha dabiiciga ah. Qiiqa silica, kaas oo ah wax soo saarka ka soo baxa birta silicoon iyo birta ferrosilicon, ayaa sidoo kale loo rogi karaa SiC iyadoo lagu kululeynayo graphite 1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Faahfaahin kale oo gaar ah ayaa la bixin karaa haddii la codsado.
| Burbur | Sic | FC | Fe2O3 |
| F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
| F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
| F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
| F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
| F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
| F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
| P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
| P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
| P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
| P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
| P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
| P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
| Burcad | Cufnaanta Badan (g/cm3) | Cufnaanta Sare (g/cm3) | Burcad | Cufnaanta Badan (g/cm3) | Cufnaanta Sare (g/cm3) |
| F16 ~ F24 | 1.42~1.50 | ≥1.50 | F100 | 1.36~1.45 | ≥1.45 |
| F30 ~ F40 | 1.42~1.50 | ≥1.50 | F120 | 1.34~1.43 | ≥1.43 |
| F46 ~ F54 | 1.43~1.51 | ≥1.51 | F150 | 1.32~1.41 | ≥1.41 |
| F60 ~ F70 | 1.40~1.48 | ≥1.48 | F180 | 1.31~1.40 | ≥1.40 |
| F80 | 1.38~1.46 | ≥1.46 | F220 | 1.31~1.40 | ≥1.40 |
| F90 | 1.38~1.45 | ≥1.45 |
Haddii aad qabtid wax su'aalo ah. Fadlan xor u noqo inaad nala soo xiriirto.