Sababtoo ah naadirka moissanite dabiiciga ah, inta badan carbide silicon waa synthetic.Waxa loo istcimaalaa sidii abrasive, iyo dhawaanahan sidii semiconductor iyo jilbaha dheeman ee tayada jawharad.Habka ugu fudud ee wax soo saarka waa in la isku daro ciidda silica iyo kaarboonka ee Acheson graphite foornada iska caabinta korantada heerkulka sare, inta u dhaxaysa 1,600 °C (2,910 °F) iyo 2,500 °C (4,530 °F).Qaybaha SiO2 ee wanagsan ee ku jira walxaha dhirta (tusaale qolof bariis) waxa loo rogi karaa SiC iyadoo lagu kululeeyo kaarboonka xad dhaafka ah ee walxaha dabiiciga ah.Qiiqa silica, kaas oo ka soo baxa soo saarista birta silikoon iyo daawaha ferrosilicon, waxa kale oo loo rogi karaa SiC iyadoo lagu kululeynayo garaafka 1,500 °C (2,730 °F).
F12-F1200, P12-P2500
0-1mm, 1-3mm, 6/10, 10/18, 200mesh, 325mesh
Tilmaamo kale oo gaar ah ayaa lagu soo bandhigi karaa haddii la codsado.
Grit | Sida | FC | Fe2O3 |
F12-F90 | ≥98.50 | <0.20 | ≤0.60 |
F100-F150 | ≥98.00 | <0.30 | ≤0.80 |
F180-F220 | ≥97.00 | <0.30 | ≤1.20 |
F230-F400 | ≥96.00 | <0.40 | ≤1.20 |
F500-F800 | ≥95.00 | <0.40 | ≤1.20 |
F1000-F1200 | ≥93.00 | <0.50 | ≤1.20 |
P12-P90 | ≥98.50 | <0.20 | ≤0.60 |
P100-P150 | ≥98.00 | <0.30 | ≤0.80 |
P180-P220 | ≥97.00 | <0.30 | ≤1.20 |
P230-P500 | ≥96.00 | <0.40 | ≤1.20 |
P600-P1500 | ≥95.00 | <0.40 | ≤1.20 |
P2000-P2500 | ≥93.00 | <0.50 | ≤1.20 |
Gariir | Cufnaanta Bulk (g/cm3) | Cufnaanta Sare (g/cm3) | Gariir | Cufnaanta Bulk (g/cm3) | Cufnaanta Sare (g/cm3) |
F16 ~ F24 | 1.42 ~ 1.50 | ≥1.50 | F100 | 1.36 ~ 1.45 | ≥1.45 |
F30 ~ F40 | 1.42 ~ 1.50 | ≥1.50 | F120 | 1.34 ~ 1.43 | ≥1.43 |
F46 ~ F54 | 1.43 ~ 1.51 | ≥1.51 | F150 | 1.32 ~ 1.41 | ≥1.41 |
F60 ~ F70 | 1.40 ~ 1.48 | ≥1.48 | F180 | 1.31 ~ 1.40 | ≥1.40 |
F80 | 1.38 ~ 1.46 | ≥1.46 | F220 | 1.31 ~ 1.40 | ≥1.40 |
F90 | 1.38 ~ 1.45 | ≥1.45 |
Haddii aad wax su'aalo ah qabtid. Fadlan xor ayaad u tahay inaad nala soo xiriirto.